Samsung has announced the completion of its 5nm FinFET process technology, expanding its extreme ultraviolet (EUV)-based process portfolio. Samsung claims its 5nm FinFET process offers 10 percent improvement in performance with 20 percent lower power consumption when compared to 7nm chipsets, further helped by the EUV lithography that “reduces mask layers while providing better fidelity.”
Samsung is also quick to point out that its 5nm process can reuse 7nm intellectual property (IP), thus helping its customers to reduce product development time and migration costs.
While chipsets with 5nm process is still under sampling, they are collaborating with customers on 6nm with a product that has already been taped-out of its 6nm process.